Structure of PECVD Si:H films for solar cell applications

Abstract The structure of undoped SiːH films and solar cells deposited under different hydrogen concentration and substrate temperatures were studied. The characterization techniques used were XRD, Raman spectroscopy, TEM, optical absorption, and hydrogen effusion. The high concentration films were amorphous in the as-deposited state but crystallized upon annealing at 700°C. Middle and low concentration films were nanocrystalline (nc) and remained nc up to 800°C annealing. A theoretical explanation is given for the stability of these films. Such films, on glass substrates, had optical absorption spectra close to those of amorphous material. The solar cell samples, showed some nc morphology in all-concentration states.