Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

This work has been supported by the Baseline funding scheme of the King Abdullah University of Science and Technology (KAUST) in Saudi Arabia, the Ministry of Science and Technology of China (Grant No. 2018YFE0100800), the National Natural Science Foundation of China (Grants No. 11661131002, 61874075), the Ministry of Finance of China (grant no. SX21400213), the 111 Project from the State Administration of Foreign Experts Affairs of China, the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, and the Priority Academic Program Development of Jiangsu Higher Education Institutions, the MINCyT (Contract Nos. PICT2013/1210, PICT2016/0579, and PME2015-0196), CONICET (Project No. PIP-11220130100077CO), and UTN.BA (Project Nos. PID-UTN EIUTIBA4395TC3, CCUTIBA4764TC, MATUNBA4936, CCUTNBA5182, and CCUTNBA0006615). Y.S. acknowledge support from the European Union (Marie Sklodowska-Curie actions, Grant No. 894840).