Comprehensive parametric investigations of EOFM measurements on single FinFET transistors

Electro-optical techniques are the standard techniques for contactless fault isolation in modern IC's. And because these modern IC's are composed of FinFETs, the understanding of Electro-Optical Frequency measurements on single FinFETs is an important addition to the general picture acquired by electrooptical techniques. Electro-Optical Frequency Mapping (EOFM) is a destruction-free fault isolation method, that has been successfully used, among others, on single silicon transistors, metal-oxide-semiconductor structures and bipolar transistors. In this work, a parametric study of EOFM measurements of single n-type and p-type FinFETs has been performed. Nominal dynamic operations, as well as the behavior of the respective terminals have been studied. Furthermore, EOFM signals could be successfully acquired under subthreshold conditions for both types of transistors. In a last step, the FinFET devices have been studied under different back bias conditions.