Old Web
English
Sign In
Acemap
>
Paper
>
Effect of Hole-Doping in High-T_c Ln_1Ba_2Cu_3O_ (Ln=Nd,La,Pr) : Electrical Properties of Condensed Matter
Effect of Hole-Doping in High-T_c Ln_1Ba_2Cu_3O_ (Ln=Nd,La,Pr) : Electrical Properties of Condensed Matter
1988
Hiromoto Uwe
Tunetaro Sakudo
Hajime Asano
Tae-Su Han
Kazuhiro Yagi
Ryusuke Harada
Michiaki Iha
Yasuharu Yokoyama
Keywords:
Doping
Physics
Condensed matter physics
High-temperature superconductivity
Analytical chemistry
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]