Tunable giant anomalous Hall angle in perpendicular multilayers by interfacial orbital hybridization

Spintronic device based on spin-dependent Hall effect has been widely aroused due to great potential applications in the multi-value storage and logic gate, as a promising candidate to break the bottleneck of information industry in the big data period. It is a technological challenge to implant spintronic device into semiconductor integrated circuit. Anomalous Hall angle (θ), defined as the deviation of the electron flow from the current direction, is the key parameter to evaluate the capacity of Hall device compatibility. However, the bottleneck for device is low θ (less than 5%) at room temperature (RT), making it difficult to directly complement with semiconductor circuit which limits its potential application. Here we report a simple perpendicular multilayered structure with θ up to 5.1% at RT. Wide working temperature (250 K - 350 K) across RT for our samples will accelerate the potential applications in spintronic memory. Giant Hall angle at RT originates from the enhanced side jump scattering at a...