Insulation Simulation Analysis of Press-Pack IGBT

In high voltage applications such as power grid and rail transportation, IGBT devices generally operate under very harsh conditions, which places high demands on device reliability. In this paper, the electric field distribution of silicon chip termination area and press-pack IGBT package structure under high voltage reverse bias experimental conditions is simulated by Fem software. The results indicate the potential electrical insulation failure areas in the package model and the corresponding optimization measures are proposed. To some extent, the problem of breakdown discharge of IGBT devices during operation is alleviated.