Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47−xAs layers on InP in the wavelength range 280–1900 nm

Abstract In 0.52 Al 0.48 As and In 0.53 Al x Ga 0.47− x As layers on InP are promising quaternary materials for optoelectronic devices: lasers containing these materials have been realized and show excellent performance. The refractive indices of both In 0.52 Al 0.458 Ga 0.022 As and In 0.53 Al 0.055 Ga 0.415 As are measured for the first time with multiple angle spectroscopic ellipsometry in the wavelength range 280–1900 nm.