Old Web
English
Sign In
Acemap
>
Paper
>
AlGaN/GaNに及ぼすSiC FETのためのTi及びTaベースOhm接触の形態学的および電気的比較【Powered by NICT】
AlGaN/GaNに及ぼすSiC FETのためのTi及びTaベースOhm接触の形態学的および電気的比較【Powered by NICT】
2017
Alexander Pooth
Johan Bergsten
Niklas Rorsman
Hassan Hirshy
Richard Marc Perks
Paul J. Tasker
Trevor P. Martin
Richard F. Webster
D Cherns
Michael J. Uren
Martin Kuball
Keywords:
Computer engineering
Electronic engineering
Engineering
Engineering physics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]