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Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment
Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment
2020
Shunsuke Kamiya
Takashi Nishitani
Yu Matsuda
Nozomu Takano
Joel T. Asubar
Hirokuni Tokuda
Masaaki Kuzuhara
Keywords:
Optoelectronics
Materials science
Breakdown voltage
High-electron-mobility transistor
algan gan
oxygen plasma
Gallium nitride
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