Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures
1999
Narrow-channel nMOSFETs with recessed LOCOS (R-LOCOS) isolation structures exhibit less hot-carrier-induced degradation than wide-channel nMOSFETs, but the degradation mechanism of both devices is the same. This new finding is explained by the fact that in deep sub-/spl mu/m MOSFETs with ultra-thin gate oxides and a relatively thin field oxide, the dominant factor deciding the degradation behaviour in narrow channel and wide channel devices is the vertical electric field effect rather than the mechanical stress effect.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
11
References
0
Citations
NaN
KQI