Analysis of strained double-lightly doped MOSCNT using NEGF

The effects of uniaxial and torsional strains on the double-lightly doped MOSCNT (DLD-MOSCNT) performances are investigated, using the non-equilibrium Green function (NEGF) formalism in mode space approach. The Hamiltonian of the device is obtained by a tight-binding approximation assuming that only p z orbitals are contributing in carrier transport. In all simulation processes, one mode with the lowest subband is considered. DLD-MOSCNT has a small band-to-band tunneling and almost eliminates the ambipolar behavior of I DS–V GS characteristics because of the band engineering. We use a modified model to demonstrate the strain effects on such a low OFF-current device. The results show that the strain effects mainly depend on the chiral vector and diameter of CNT. The strain causes band gap and carrier velocity changes, which result in variation of ON- or OFF-current. In addition, the subthreshold swing of this device under uniaxial strain is calculated, which is about 61 mV/Dec for 2 % tensile strain in (16,0) and for −2 % compressive strain in (17,0). Under the uniaxial strain, in the case that the energy band gap increases, the variation of DIBL is very small.