Characterization of a Mo/Au Thermometer for ATHENA

2013 
The first dark characterization of a thermometer fabricated with our Mo/Au bilayers to be used as a transition edge sensor is presented. High-quality, stress-free Mo layers, whose thickness is used to tune the critical temperature ( T C ) down to 100 mK, are deposited by sputtering at room temperature ( RT ) on Si 3 N 4 bulk and membranes, and protected from degradation with a 15-nm sputtered Au layer. An extra layer of high-quality Au is deposited by ex situ e-beam to ensure low residual resistance. The thermometer is patterned on a membrane using standard photolithographic techniques and wet etching processes, and is contacted through Mo paths, displaying a sharp superconducting transition (α ≈ 600). Results show a good coupling between Mo and Au layers and excellent T C reproducibility, allowing to accurately correlate d Mo and T C . Since d Au is bigger than ξ M for all analyzed samples, bilayer residual resistance can be modified without affecting T C . Finally, first current to voltage measurements at different temperatures are measured and analyzed, obtaining the corresponding characterization parameters.
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