High mobility germanium-on-insulator p-channel FinFETs

We fabricated and investigated the electrical characteristics of Ge pFinFET on (100)-oriented GeOI wafer. Transistors with fin channel along [110] direction demonstrate the improved drive current and channel ΔRtot/ΔLG compared to the devices along [100] direction. At a Qinv of 5 × 1012 cm−2, GeOI FinFETs along [110] direction have 60% and 10% improved μeff in comparison with [100] devices and Si university mobility, respectively.