Development of EUV resist for 22nm half pitch and beyond
2010
In order to achieve targeted resist performance for EUV in practical applications, we have developed new materials such
as molecular glass (MG), PAG, and acid amplifiers (AA). Protected NORIA, a molecular glass, was examined for
extending resolution limits. The resist with protected NORIA showed 22 nm hp resolutions under EUV exposure. PAG
acid diffusion effect on LWR was also investigated. It was found that acid diffusion control was one of the most
important factors for LWR improvement. To improve sensitivity, application of AA (acid amplifier) was investigated.
The resist with AA gained 25% sensitivity improvement over the original formulation. Elemental technologies for major progress of EUV resist were made.
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