Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure

We present vertical gate-all-around (VGAA) tunnel FETs (TFETs) using InGaAs nanowire (NW)/Si heterojunction with modulation doped core-multishell NW structures. The NW/Si heterojunction was composed of the axial n+-InGaAs/intrinsic InGaAs NW/p-Si. We investigated effect of using modulation-doped InGaAs/InP/InAlAs/InP core-multishell NW structure for switching performance and showed current enhancement with a steep subthreshold slope (SS). The device exhibited a minimum SS of 21 mV/decade. In addition, the device showed high transconductance efficiency of around 520/V, which exceeded the theoretical maximum limit for conventional FETs (38.5/V). And we demonstrated p-channel switching behavior while maintaining steep SS with same architecture.