Extent of Shallow/Deep Trap States Beyond Conduction Band Minimum in Defect Tolerant CsPbBr3 Perovskite Quantum Dot: Control Over the Degree of Charge Carrier Recombination

Perovskite quantum dots (PQDs) are known to be defect tolerant possessing clean band-gap with optically inactive benign defect states. However, we show that there exists significant deep trap states beyond conduction band minimum, although the extent of shallow trap states is observed to be minimal. Extent of deep trap states beyond conduction band minimum seem to significant in PQD, however the extent is less than even optically robust CdSe and InP based core/alloy-shell QDs. In-depth analyses based on ultrafast transient absorption and ultrasensitive single particle spectroscopic investigations decode the underlying degree of charge carrier recombination in CsPbBr3 PQD which are quite important for energy applications.