Plasma diagnostics of resonance magnetic field effects on a-Si:H thin films deposition using electron cyclotron resonance plasma

This study demonstrated the use of quadrupole mass spectrometer (QMS) and optical emission spectrometer (OES) in diagnosing plasma process of electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The result showed that, by adjusting main magnetic coil current in ECR-CVD system, the relationship between plasma chemical composition and magnetic field was discussed in this paper. As the results, by controlling appropriate magnetic field configuration, the characteristics of a-Si:H thin film such as photosensitive, microstructure and deposition rate could be improved.