Study of the dynamics and mechanisms of deformation of thin chalcogenide As(Ge)2Se3 films by nanoindentation

The mechanical properties of As2Se3 and Ge2Se3 thin films have been studied by the method of quasi-static nonoindentation. The mechanisms of formation and recovery of the indentations in the studied materials have been analyzed under conditions of their local loading. It has been revealed that the deformation mechanism of the chalcogenide films changes in going from As2Se3 to Ge2Se3. It has been found that, during deformation of the As2Se3 film under the indenter, the accumulation of plastic deformation prevails, and, for the Ge2Se3 film, the substantial mechanism is the relaxation of its deformation.