The novel transistor and photodetector of monolayer MoS2 based on surface-ionic-gate modulation powered by a triboelectric nanogenerator

Abstract Modulating the carrier transport behavior by gate voltage is an important strategy for developing electronic and optoelectronic devices. However, the previous gate modulation technologies are generally applied in solid/semiconductor or liquid/semiconductor interface. Here, based on the phenomenon of gas discharge powered by a triboelectric nanogenerator (TENG), the technology of surface ionic gate (SIG) in the gas/semiconductor interface has been proposed, and novel transistor and photodetector of monolayer MoS 2 have been developed using SIG modulation. In SIG-based transistor, the gas ions generated in gas discharge are adsorbed on monolayer MoS 2 , which act as the gate to modulate the carrier concentration and electrical transport. The modulation results can be controlled step-by-step by the operation cycles of TENG, and a maximum on-off ratio of 10 4 in current has been obtained. In SIG-based photodetector, the photocurrent recovery time of the monolayer MoS 2 device is about 74 ms, which is reduced approximately 90 times compared to that without SIG modulation. In addition, the photocurrent of SIG-based photodetector increases linearly with time during a period of 120 s, which can be used to develop a novel photodetector for luminous flux. The working mechanism of the SIG-based transistor and SIG-based photodetector have been discussed. The SIG technology proposed here can modulate the electrical transport properties and surface local energy band structure of two-dimensional (2D) materials, which provides promising strategy for developing novel 2D electronic and optoelectronic devices.