Industrialization of a laser produced plasma EUV light source for lithography

Igor V. Fomenkov,Alex Schafgans,Slava Rokitski,Michael Kats,Jayson Stewart,Andrew LaForge,A. Ershov,Michael Purvis,Yezheng Tao,Mike Vargas,J. Grava,Palash Parijat Das,L. Urbanski,Robert Jay Rafac,J. Lukens,Chirag Rajyaguru,G. Vaschenko,Mathew Abraham,David C. Brandt

Industrialization of a laser produced plasma EUV light source for lithography

2017

Igor V. Fomenkov
Alex Schafgans
Slava Rokitski
Michael Kats
Jayson Stewart
Andrew LaForge
A. Ershov
Michael Purvis
Yezheng Tao
Mike Vargas
J. Grava
Palash Parijat Das
L. Urbanski
Robert Jay Rafac
J. Lukens
Chirag Rajyaguru
G. Vaschenko
Mathew Abraham
David C. Brandt

ASML is committed to develop high power EUV source technology for use in EUV lithography for high-volume-manufacturing (HVM) of semiconductors. A stable dose controlled Laser-Produced-Plasma (LPP) EUV source has been successfully developed and introduced using a CO2 laser and small tin (Sn) droplets.

Keywords:

Extreme ultraviolet
Plasma
Optics
Optoelectronics
Physics
Laser
Tin
Lithography
Semiconductor
Extreme ultraviolet lithography
light source

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations