A >3 kV/2.94 mΩ ·cm2 and Low Leakage Current with Low Turn-on Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate with Anode Engineering Technique

In this letter, we report on demonstrating high-performance lateral GaN Schottky barrier diode (SBD) on silicon substrate with low turn-on voltage (Von), high breakdown voltage (BV) with low reverse leakage current (IR), and high power figure of merit (P-FOM) through anode engineering technique. Lateral GaN SBD with anode-cathode distance (LAC) of 25 μm demonstrates a Von = 0.38 V, a BV of >3 kV at a IR of 10 μA/mm and differential specific ON-resistance (Ron,sp) of 2.94 mΩ ·cm2, yielding a high P-FOM of more than 3 GW/cm2. To the best of our knowledge, this P-FOM is the highest value among all the GaN SBDs on any substrates. Combining with 5 A forward current (IF) and reverse BV > 2 kV of a large periphery device with perimeter of 20 mm, GaN SBD with anode engineering technique shows its great promise for next generation power electronics.