Silicon-migration technology for MEMS-CMOS monolithic integration

A scheme for the monolithic integration of complementary metal-oxide-semiconductor (CMOS) circuits and microelectromechanical systems (MEMS) based on the silicon-migration technology (SiMiT) is developed. The process-incompatibility issues inherently present in traditional integration schemes are largely avoided by the elimination of the sacrificial layer etch. This pre-CMOS integration scheme is demonstrated using a 16×16 active-matrix tactile sensor “addressed” with an integrated ring counter.