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Acemap > Paper > Significant Improvement of p-type 4H-SiC MOS Interface Characteristics by Low Temperature Post-Oxidation Annealing in H 2 O + O 2 Ambient

Significant Improvement of p-type 4H-SiC MOS Interface Characteristics by Low Temperature Post-Oxidation Annealing in H 2 O + O 2 Ambient

2018 
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