EUV mask line edge roughness
2012
Extreme ultraviolet (EUV) mask fabrication faces many unique challenges, including more stringent line edge roughness
(LER) requirements. EUV mask absorber LER will need to be reduced to reliably meet the 2013 International Roadmap
for Semiconductors line width roughness target of 3.3 nm. This paper will focus on evaluating resists modified and
deployed specifically to reduce LER on EUV masks. Masks will be built, and the final mask absorber LER reported
considering multiple imaging and analysis techniques. An assessment of best methods for mask LER analysis will be
provided and used to judge resist performance.
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