Memory effect in antiferroelectrics: A systematic analysis on various electric hysteresis loops

Abstract Antiferroelectric materials are proposed as a potential solution to achieve multi-state memories, but the fundamental physical mechanism underlying the memory effect still needs to be clarified. Here, we study the memory effect in a typical antiferroelectric ceramic of Pb0.99Nb0.02[(Zr0.6Sn0.4)0.95Ti0.05]0.98O3 by systematically analyzing various hysteresis loops of polarization intensity and current density vs. electric field, where the kinetic behaviors are concerned about for the first time. The parallel pre-poling electric field reduces the critical electric field of antiferroelectric-ferroelectric phase transition, while the antiparallel field increases it. The memory behavior is significantly enhanced with the increasing of pre-poling time, but exhibits a remarkable weakening with the relaxation time increasing. It is a combined effect of electric-field-induced preferentially oriented antiferroelectric domains and internal bias electric field. This work not only improves comprehending in memory effect in antiferroelectric materials, but also enlightens the deeper understanding of other physical properties related to field-induced phase transitions.