Dual-band light-emitting diode based on microwheel cavity

Compact and broadband electroluminescent (EL) devices have garnered considerable interest in recent years. In this study, we have fabricated a light-emitting diode (LED) based on a GaN microwheel cavity with a peak emission wavelength of 438 nm. Another emission peak at 512 nm is realized by coating CH3 NH3 PbBr3 on the LED. The microwheel-cavity–based LED is fabricated by photolithography and inductively coupled plasma etching process. The opto-electrical performance of the device is characterized in terms of the EL spectrum, luminescence intensity, full width at half maximum, and 3 dB bandwidth. Compared to the device without the CH3 NH3 PbBr3 layer, the proposed device exhibits dual-band illumination and higher 3 dB bandwidth with potential applications in optical communication.