Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO 2 /AlN Bragg reflectors

Integration possibilities of Ba x Sr 1-x TiO 3 (BST) based tunable Thin Film Bulk Acoustic Wave Resonators (TFBAR) using all-dielectric SiO 2 /AlN Bragg reflectors deposited on a high resistivity silicon strate are considered. SiO 2 /AlN reflectors withstand the high deposition temperature (≫600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits.