Influence of Experimental Parameters on the Determination of Tetragonal Distortion in Heterostructures by LACBED

The LACBED technique has been applied to the determination of the tetragonal distortion in Si 1-x Ge x /Si heterostructures, which are of great interest in the device technology. The strain determination has been performed on plan sections in an analytical electron microscope. The agreement between this strain value and the tetragonal distortion is influenced mainly by the local sample flatness and the acceleration voltage.