Tridimensional morphology and kinetics of etch pit on the {0 0 0 1} plane of sapphire crystal

Abstract The tridimensional morphology and etching kinetics of the etch pit on the C-{0 0 0 1} plane of sapphire crystal (α-Al 2 O 3 ) in molten KOH were studied experimentally. It was shown that the etch pit takes on tridimensional morphologies with triangular symmetry same as the symmetric property of the sapphire crystal. Pits like centric and eccentric triangular pyramid as well as hexagonal pyramid were observed, but the latter is less in density. In-depth analyses show the side walls of the etch pits belong to the {1  1 ¯  0  2 ¯ } family, and the triangular pit contains edges full composed by Al 3+ ions on the etching surface so it is more stable than the hexagonal pit since its edges on the etching surface contains Al 2+ ions. The etch pits developed in a manner of kinematic wave by the step moving with constant speed, which is controlled by the chemical reaction with activation energy of 96.6 kJ/mol between Al 2 O 3 and KOH.