Low noise and high gain-bandwidth product AlInAs avalanche photodiodes

We demonstrate a planar junction AlInAs APD using Carbon as p-doping impurity of the charge layer allowing to achieve simultaneously a high primary sensitivity of 0.9 A/W, a low dark current (I dark (M=10)=17 nA at ambient temperature), a low excess noise factor (f(M=10)=3.5) and high gaintimesbandwidth product over 140 GHz.