Crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition

Plastic flows of a large lattice-mismatch InSb epilayer on GaAs substrate grown by metalorganic chemical vapor deposition (MOCVD) were first observed by scanning electron acoustic microscopy (SEAM), and crystalline state of the buried subsurfaces was discussed. From the SEAM images in two different positions a macroscopical heterogenous distribution of large compression stress fields was studied. It was a very important result to observe and study the plastic flows by SEAM uniquely imaging mechanism.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.