A Silicon BJT Active ESD Clamp Design in a Silicon Germanium HBT BiCMOS Technology

This paper describes an active ESD clamp design using a silicon bipolar junction transistor NPN in a silicon germanium hetero-junction bipolar transistor 0.25µm BiCMOS process. The crystal defects causing a random leakage increase inside the ESD clamp were eliminated successfully. The ESD clamp achieved a good ESD performance.