Investigation on the electrical properties of amorphous Indium-Zinc-Titanium-Alumina Oxide thin film transistors

Abstract We fabricated bottom-gate thin film transistors (TFTs) with Indium-Zinc-Titanium-Alumina Oxide (IZTiAO) active layer by radio frequency (RF) magnetron sputtering at room temperature. The structural characteristic of the IZTiAO film was investigated by X-ray diffraction (XRD). The IZTiAO TFTs fabricated under optimal conditions exhibit excellent performance with a saturation mobility (μsat) of 32.1 cm2/V•s, an on/off current ratio (Ion/off) of 8 × 108, an off current (Ioff) of 5 × 10−13A, a low subthreshold swing(SS) of 0.23 V/dec and a threshold voltage (Vth) of 1.2 V, respectively. The shifts of the Vth of IZTiAO TFT under positive bias stress and negative bias stress were investigated.