Single- and few-layer 2H-SnS2 and 4H-SnS2 nanosheets for high-performance photodetection

ABSTRACT The properties of two-dimensional (2D) materials are highly dependent on their phase and thickness. Various phases exist in tin disulfide (SnS2), resulting in promising electronic and optical properties. Hence, accurately identifying the phase and thickness of SnS2 nanosheets is prior to their optoelectronic applications. Herein, layered 2H-SnS2 and 4H-SnS2 crystals were grown by chemical vapor transportation and the crystalline phase of SnS2 was characterized by X-ray diffraction, ultralow frequency (ULF) Raman spectroscopy and high-resolution transmission electron microscope. As-grown crystals were mechanically exfoliated to single- and few-layer nanosheets, which were investigated by optical microscopy, atomic force microscopy and ULF Raman spectroscopy. Although the 2H-SnS2 and 4H-SnS2 nanosheets have similar optical contrast on SiO2/Si substrates, their ULF Raman spectra obviously show different shear and breathing modes, which are highly dependent on their phases and thicknesses. Interestingly, the SnS2 nanosheets have shown phase-dependent electrical properties. The 4H-SnS2 nanosheet shows a current on/off ratio of 2.58 × 105 and excellent photosensitivity, which are much higher than those of the 2H-SnS2 nanosheet. Our work not only offers an accurate method for identifying single- and few-layer SnS2 nanosheets with different phases, but also paves the way for the application of SnS2 nanosheets in high-performance optoelectronic devices.