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Analysis of Gate Delay Scaling in In 0.7 Ga 0.3 As-Channel HEMTs
Analysis of Gate Delay Scaling in In 0.7 Ga 0.3 As-Channel HEMTs
2008
Shunsuke Fukuda
Tetsuya Suemitsu
Taiichi Otsuji
Dae-Hyun Kim
J.A. del Alamo
Keywords:
Scaling
Electronic engineering
Physics
Communication channel
Optoelectronics
Correction
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