Total Ionizing Dose Effect in LDMOS oxides and devices

Laterally diffused metal oxide semiconductors transistors PD-SOI 150nm mixed technology from Microchip are irradiated with 60Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the on-resistance. In this study, degradation mechanisms at play are investigated through TCAD simulation and an explanation of the physical mechanisms for the observed degradation is proposed.