Semiconductor lasers with dry-etched facets

Semiconductor lasers with dry etched facets are of interest for monolithic 2-D coherent applications such as optical interconnects and optoelectronic integrated circuits. This paper reports recent development on this area including high-performance 3 X 3 individually addressable InGaAs/GaAs single-mode surface emitting laser diodes, 630 nm GaInP/GaAlInP surface-emitting laser diodes, and 1.3 micrometers InGaAsP/InP surface-emitting laser diodes grown on Si substrate.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.