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Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface
Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface
2018
Kenjiro Uesugi
Aya Shindome
Yosuke Kajiwara
Toshiya Yonehara
Daimotsu Kato
Toshiki Hikosaka
Masahiko Kuraguchi
Shinya Nunoue
Keywords:
Thermal treatment
Physics
Nuclear magnetic resonance
Communication channel
Condensed matter physics
Correction
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