Surface Science Letters Wavelet characterization of the submicron surface roughness of anisotropically etched silicon

The roughness of etched Si(1 1 0) surfaces in tetra-methyl ammonium hydroxide has been characterized using the wavelet transform formalism. Wavelet coeAcients corresponding to the experimental surface profiles have been calculated and the roughness exponent has been derived using the scalegram method. Its value has been found to be 0.5. ” 2000 Elsevier Science B.V. All rights reserved.