Metal-organic chemical vapor deposition of β-In2S3 thin films using a single-source approach

Dithioimidobisdiisopropylphosphinato indium chloride In[(SP i Pr 2 ) 2 N] 2 Cl has been shown to be an effective single-source precursor for the deposition of indium sulfide films by aerosol-assisted chemical vapor deposition (AACVD). X-ray powder diffraction (XRPD) studies indicated that polycrystalline β-In 2 S 3 films with the tetragonal phase have been deposited on glass substrates (425-475°C). The morphology of films was confirmed by scanning electron microscopy (SEM). Energy dispersive X-ray analysis (EDAX) indicates the presence of indium and sulfur.