Electrical characterization of GaN-channel MOSFETs

Jakub Jasiński,L. Łukasiak,A. Jakubowski,Do-Kywn Kim,Dong-Seok Kim,Sung-Ho Hahm,Jung Hee Lee

Electrical characterization of GaN-channel MOSFETs

2013

Jakub Jasiński
L. Łukasiak
A. Jakubowski
Do-Kywn Kim
Dong-Seok Kim
Sung-Ho Hahm
Jung Hee Lee

The channel mobility and reliability of NMOSFETs with GaN channel are investigated by means of split CV and constant-voltage-stress techniques. The influence of stress polarity and duration on current in the off-state, threshold voltage and subthreshold slope is studied.

Keywords:

Subthreshold slope
Gallium nitride
Subthreshold conduction
Threshold voltage
Electronic engineering
Communication channel
Reverse short-channel effect
Materials science
Optoelectronics
Electrical engineering

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