High-Performance Inverted $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD

We report inverted-type In 0.51 Al 0.49 As/In 0.53 Ga 0.47 As MOSHEMTs heteroepitaxially grown on GaAs substrates by metal-organic chemical vapor deposition. High 2-D electron gas Hall mobility values of 8200 cm 2 /V · s at 300 K and 33 900 cm 2 /V · s at 77 K have been achieved. The buried quantum-well channel design is combined with selectively regrown source/drain (S/D) using a gate-last process. A 120-nm-channel-length MOSHEMT exhibited a maximum drain current of 1884 mA/mm, peak transconductance of 1126 mS/mm at V ds = 0.5 V, and a subthreshold slope of 135 mV/dec at V ds = 0.05 V. With the regrown S/D, an ultralow on-state resistance of 156 Ω·μm was obtained.