Electron microscope studies of lattice defects in pseudo-one-dimensional crystal of Nb3Te4

Abstract Dislocations and stacking faults in a pseudo-one-dimensional crystal of hexagonal Nb3Te4 have been examined by conventional and high-resolution electron microscopy for cleaved and ion-thinned samples. Dislocations introduced by slip on {1010} planes have the Burgers vector either of (⅓)‘1210’, [0001] or (⅓)‘1213’; the last one being produced as reacted segments of the first and the second dislocations. Zigzag stacking faults on {1010} planes, which are observed only in samples prepared by ion-thinning, have the fault vector of (l/6;)‘20232’. A mechanism is proposed in which the zigzag fault is created by climb and glide of a dislocation due to segregation of interstitial atoms produced during the ion-thinning process. A possible atomic configuration in the stacking fault is suggested.