Growth of La2Mo2O9 films on porous Al2O3 substrates by radio frequency magnetron sputtering

Abstract Synthesis conditions of La 2 Mo 2 O 9 thin film by radio frequency (RF) sputtering technique on Al 2 O 3 ceramic substrates are studied. It is found that the deposition temperature and oxygen partial pressure are the most important factors for obtaining pure La 2 Mo 2 O 9 films. Varying both parameters, Mo-rich, stoichiometric, and Mo-deficient films are obtained. With increasing the La:Mo ratio, films become denser. A crust layer is observed on top of the Mo-rich and the Mo-deficient films. The formation of the La 2 Mo 2 O 9 phase is discussed with respect to the sputtering mechanism.