O-Doped Sb 70 Se 30 Phase-Change Materials for High Thermal Stability and Fast Speed

Oxygen doping was applied to improve the thermal stability of Sb70Se30 materials. Compared with Sb70Se30 film, the O-doped Sb70Se30 films exhibited higher crystallization temperature (∼240°C), larger crystallization activation energy (4.99 eV) and better data retention (176.1°C for 10 years). O-doping also broadened the band gap and refined the grain size. A faster phase switching speed was obtained for O-doped Sb70Se30 materials. After O-doping, the phase change film had a smaller surface roughness (1.35 nm) than Sb70Se30.