An extended majority‐carrier approach for the DC and small‐signal simulation of ion‐implanted mesfets on compensated and p‐type substrates

The paper proposes an extended majority-carrier dc and ac two-dimensional physical model for the simulation of ion-implanted MESFETs on semi-insulating and p-type substrates, including the static and dynamic treatment of partly ionized impurity levels. The numerical implementation of the model is discussed, and it is shown how numerical ill-conditioning problems suggest the implementation of a full two-carrier model for the simulation of devices with un-depleted p-type substrates. A discussion is presented on the interpretation of rate-dependent anomalies related to the frequency behaviour of the small-signal parameters, and the importance of simulating a backgate electrode is stressed. Finally, comparisons are given with ac and dc data measured on p-buried layer Siemens devices.