Combining optical and thermal stresses in multiple-shot laser experiments

1999 
We report surface damage measurements on single crystal silicon under single and multiple 3 ns pulse laser irradiation at 1.06 micrometers wavelength. First, single shot damage threshold is measured. Then the numbers of pulses required to damage with a probability of 0.5 at various fluences below this 1/1 threshold are obtained at room temperature. These results are fitted with various life models. We look at temperature as a means to accelerate life test. A new feature of the laser test facility in our laboratory is described, allowing surface damage measurements under controlled thermal environment, with testing temperatures ranging from room temperature to 180 Celsius degrees. Experimental demonstration of accelerated failure time for silicon at 1.06 micrometers is provided.
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