Degradation of perovskite Pb(Zr,Ti)O/sub 3/ thin films fabricated by pulsed laser ablation

Ferroelectric thin films of Pb(Zr,Ti)O/sub 3/ (PZT) were prepared on platinum (Pt) and SrRuO/sub 3/ (SRO) thin film electrodes by the fourth harmonic wave (/spl lambda/=266 nm) of a pulsed Nd/sup 3+/:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As a result, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer remained constantly more than 10/sup 11/ switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer.