Structural and optoelectronic studies of CuO, In2-xAlxS3 and SnO2:F sprayed thin films for solar cell application: Au/CuO (p)/In2-xAlxS3 (n)/SnO2:F

Abstract Solar cell technology for future energy resources has been progressed recently. Silicon is used as the semiconductor material for conventional solar cells, but silicon is expensive and the cost reduction of the solar cells is one of the most important issues. Oxide semiconductors are one of alternatives to silicon solar cells, and Copper (II) oxide or cupric oxide which is aninorganic compound with the formula CuO is one of candidate materials. In fact, using low cost elaboration techniques, Au/CuO (p)/ β-In2-xAlxS3 (n)/SnO2:F solar cell was successfully synthesized. Cupric oxide (CuO), aluminum doped indium sulfide (β-In2-xAlxS3) and fluorine doped tin oxide (SnO2:F) were prepared by chemical spray pyrolysis (CSP) method but gold (Au) was deposited by thermal evaporation one. Structural, morphological, electrical and optical properties of the resulting thin films were studied to evaluate their suitability for solar cell applications. These physical studies were carried out by X-Ray Diffraction, scanning electron microscopy, Hall Effect measurements and spectrophotometer. Being illuminated under incident light power (Pinc) equals to 100 mW.cm−2, from the current-voltage characteristic (J–V) of this hetero-structure, photovoltaic parameters were extracted: open circuit voltage (Voc =791.67 mV), short circuit current (Jsc =17.69 mA.cm−2), fill factor (FF = 38.4 %) and conversion efficiency (η = 5.37 %).