Broadband Repeatable <0.025 dB Average Loss Rapid Adiabatic Based 3-dB Coupler in a 45 nm SOI CMOS Process

We demonstrate a 75 µm-long rapid adiabatic coupler (RAC) with an average insertion loss <0.025 dB/coupler and an average power splitting ratio of 50±1.09% over 40 nm bandwidth and 68 reticles across a 300 mm 45 nm SOI CMOS wafer.